Datasheet > 2SB1427W6

2SB1427W6

更新时间： 2024-11-24 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	227K
描述
PNP Low Vce(sat) Transistor

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数据手册

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2SB1427W6 数据手册

P2SB1427W6

PNP Low Vce(sat) Transistor

SOT-23 6L-1

Unit: inch(mm)

20V

Voltage

Current

Features

 Silicon PNP epitaxial type

 Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA

 High collector current capability

 Excellent DC current gain characteristics

 Lead free in compliance with EU RoHS 2011/65/EU

directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 6L-1 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.014 grams

 Marking: B27

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

LIMIT

-20

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

-20

Emitter-Base Voltage

-7

Collector Current (DC)

-3

Collector Current (Pulse)

I_CP

-5

Base Current

I_B

-0.3

1.2

Collector Power Dissipation

P_D

^oC

^oC/W

Operating Junction and Storage Temperature Range

Typical Thermal Resistance from Junction to Ambient ^{(Note )}

T_J,T_STG

-55~150

R_θJA

104

Note: Mounted on FR4 PCB at 1 inch square copper pad.

February 25,2015-REV.03

Page 1

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