Datasheet > 2SB1427_1

2SB1427_1

更新时间： 2024-09-19 04:25:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	65K
描述
Power transistor (−20V, −2A)

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中文翻译

获取价格

数据手册

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2SB1427_1 数据手册

2SB1427

Transistors

Power transistor (−20V, −2A)

2SB1427

zExternal dimensions (Unit : mm)

zFeatures

1) Low saturation voltage,

4.0

2.5

V^{CE :}Max. −0.5V at IC/IB = −1A / −50mA.

2) Excellent DC current gain characteristics.

1.0

0.5

( )

(

)

(

)

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

−20

−6

−2

−3

0.5

A(DC)

A(Pulse)

Collector current

∗1

∗2

Collector power dissipation

Junction temperature

Storage temperature

∗1 Single pulse, Pw=10ms

150

°C

Tstg

−55 ~ +150

∗2 When mounted on a 40×40×0.7mm ceramic board.

zPackaging specifications and h^FE

Type

2SB1427

MPT3

Package

hFE

Marking

Code

Basic ordering unit (pieces)

∗

T100

1000

∗Denotes hFE

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

−20

−6

−

390

−

−0.5

820

−

= −50µA

= −1mA

= −50µA

CB = −16V

EB = −5V

CBO

µA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

EBO

CE(sat)

∗

C/I

= −1A/−50mA

hFE

−

MHz

CE/IC = −6V/−0.5A

CE = −10V , I

CB = −10V , I

Transition frequency

= 10mA , f= 100MHz

= 0A , f = 1MHz

Output capacitance

Cob

−

∗

Measured using pulse current.

Rev.A

1/2

12 3

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