5秒后页面跳转
2SB1427T100E PDF预览

2SB1427T100E

更新时间: 2024-11-08 12:52:39
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
3页 57K
描述
Power transistor (−20V, −2A)

2SB1427T100E 数据手册

 浏览型号2SB1427T100E的Datasheet PDF文件第2页浏览型号2SB1427T100E的Datasheet PDF文件第3页 
2SB1427  
Transistors  
Power transistor (20V, 2A)  
2SB1427  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low saturation voltage,  
4.0  
2.5  
VCE : Max. 0.5V at IC/IB = 1A / 50mA.  
2) Excellent DC current gain characteristics.  
1.0  
0.5  
(
)
1
(
)
2
3
(
)
(1) Base  
(2) Collector  
(3) Emitter  
ROHM : MPT3  
EIAJ : SC-62  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
20  
20  
6  
V
V
V
2  
3  
0.5  
A(DC)  
A(Pulse)  
Collector current  
IC  
1  
2  
Collector power dissipation  
P
C
W
2
Junction temperature  
Storage temperature  
1 Single pulse, Pw=10ms  
Tj  
150  
°C  
°C  
Tstg  
55 ~ +150  
2 When mounted on a 40×40×0.7mm ceramic board.  
zPackaging specifications and hFE  
Type  
2SB1427  
MPT3  
E
Package  
hFE  
Marking  
Code  
Basic ordering unit (pieces)  
BJ  
T100  
1000  
Denotes hFE  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
20  
20  
6  
390  
90  
30  
0.5  
0.5  
0.5  
820  
V
V
I
I
I
C
C
E
= −50µA  
= −1mA  
= −50µA  
CB = −16V  
EB = −5V  
V
I
CBO  
µA  
µA  
V
V
V
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current transfer ratio  
I
EBO  
V
CE(sat)  
I
C
/I  
B
= −1A/50mA  
hFE  
MHz  
pF  
V
V
V
CE/IC = −6V/0.5A  
CE = −10V , I  
CB = −10V , I  
Transition frequency  
f
T
E
E
= 10mA , f= 100MHz  
= 0A , f = 1MHz  
Output capacitance  
Cob  
Measured using pulse current.  
Rev.A  
1/2  

2SB1427T100E 替代型号

型号 品牌 替代类型 描述 数据表
2SB1427 ROHM

功能相似

Power transistor (−20V, −2A)
2SA1734 TOSHIBA

功能相似

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
2SA1314 TOSHIBA

功能相似

TRANSISTOR (STROBE FLASH, AUDIO POWER APPLICATIONS)

与2SB1427T100E相关器件

型号 品牌 获取价格 描述 数据表
2SB1427T100EU ROHM

获取价格

暂无描述
2SB1427T100S ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1427T100SE ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1427T100SU ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1427T100U ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
2SB1427T101 ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1427T101/E ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1427T101/S ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1427T101E ROHM

获取价格

2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1427U ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,