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2SB1427T100E PDF预览

2SB1427T100E

更新时间: 2024-11-26 12:52:39
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
3页 57K
描述
Power transistor (−20V, −2A)

2SB1427T100E 数据手册

 浏览型号2SB1427T100E的Datasheet PDF文件第2页浏览型号2SB1427T100E的Datasheet PDF文件第3页 
2SB1427  
Transistors  
Power transistor (20V, 2A)  
2SB1427  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low saturation voltage,  
4.0  
2.5  
VCE : Max. 0.5V at IC/IB = 1A / 50mA.  
2) Excellent DC current gain characteristics.  
1.0  
0.5  
(
)
1
(
)
2
3
(
)
(1) Base  
(2) Collector  
(3) Emitter  
ROHM : MPT3  
EIAJ : SC-62  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
20  
20  
6  
V
V
V
2  
3  
0.5  
A(DC)  
A(Pulse)  
Collector current  
IC  
1  
2  
Collector power dissipation  
P
C
W
2
Junction temperature  
Storage temperature  
1 Single pulse, Pw=10ms  
Tj  
150  
°C  
°C  
Tstg  
55 ~ +150  
2 When mounted on a 40×40×0.7mm ceramic board.  
zPackaging specifications and hFE  
Type  
2SB1427  
MPT3  
E
Package  
hFE  
Marking  
Code  
Basic ordering unit (pieces)  
BJ  
T100  
1000  
Denotes hFE  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
20  
20  
6  
390  
90  
30  
0.5  
0.5  
0.5  
820  
V
V
I
I
I
C
C
E
= −50µA  
= −1mA  
= −50µA  
CB = −16V  
EB = −5V  
V
I
CBO  
µA  
µA  
V
V
V
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current transfer ratio  
I
EBO  
V
CE(sat)  
I
C
/I  
B
= −1A/50mA  
hFE  
MHz  
pF  
V
V
V
CE/IC = −6V/0.5A  
CE = −10V , I  
CB = −10V , I  
Transition frequency  
f
T
E
E
= 10mA , f= 100MHz  
= 0A , f = 1MHz  
Output capacitance  
Cob  
Measured using pulse current.  
Rev.A  
1/2  

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