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2SB1427-B42 PDF预览

2SB1427-B42

更新时间: 2024-11-09 01:09:03
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科信 - KEXIN /
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3页 1139K
描述
PNP Transistors

2SB1427-B42 数据手册

 浏览型号2SB1427-B42的Datasheet PDF文件第2页浏览型号2SB1427-B42的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2SB1475  
Features  
Super Miniature Package  
Low collector-emitter saturation voltage  
High DC Current  
1 Base  
2 Emitter  
3 Collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
-25  
Unit  
V
VCBO  
VCEO  
VEBO  
-16  
-6  
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
-0.5  
A
P
C
150  
mW  
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-25  
-16  
-6  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= -100 uAI  
Ic= -1 mA, I =0  
= -100 uAI  
CB= -25V , I =0  
EB= -6V , I =0  
E=0  
B
I
E
C=0  
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
uA  
V
I
C
I
I
I
C
=-100 mA, I  
B
=-10 mA  
=-20 mA  
-0.12  
Collector-emitter saturation voltage  
V
CE(sat)  
C
C
=-500 mA, I  
B
-0.25 -0.4  
-0.95 -1.2  
-0.7  
Base - emitter saturation voltage  
Base - emitter voltage  
V
BE(sat)  
=-2 A, IB=-100 mA  
V
BE  
V
V
V
V
V
CE= -1V, I  
CE= -1V, I  
CE= -1V, I  
C= -10 mA  
C= -100 mA  
C= -500 mA  
-0.6  
110  
100  
400  
DC current gain  
hFE  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= -10V, I  
E= 0,f=1MHz  
15  
pF  
f
CE= -3V, I = 100 mA  
E
50  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
2SB1427-B42  
110-240  
B42  
2SB1427-B43  
190-320  
B43  
2SB1427-B44  
270-400  
B44  
1
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