Datasheet > 2SB1427-B42

2SB1427-B42

更新时间： 2024-11-24 01:09:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1139K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1427-B42 数据手册

SMD Type

Transistors

PNP Transistors

2SB1475

■ Features

● Super Miniature Package

● Low collector-emitter saturation voltage

● High DC Current

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-25

Unit

VCBO

VCEO

VEBO

-16

-6

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-0.5

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-25

-16

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 uA， I

Ic= -1 mA, I =0

= -100 uA， I

CB= -25V , I =0

EB= -6V , I =0

E=0

C=0

CBO

EBO

-0.1

=-100 mA, I

=-10 mA

=-20 mA

-0.12

Collector-emitter saturation voltage

CE(sat)

=-500 mA, I

-0.25 -0.4

-0.95 -1.2

-0.7

Base - emitter saturation voltage

Base - emitter voltage

BE(sat)

=-2 A, IB=-100 mA

CE= -1V, I

C= -10 mA

C= -100 mA

C= -500 mA

-0.6

110

100

400

DC current gain

hFE

Collector output capacitance

Transition frequency

^CB= -10V, I

E= 0,f=1MHz

^CE= -3V, I = 100 mA

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB1427-B42

110-240

B42

2SB1427-B43

190-320

B43

2SB1427-B44

270-400

B44

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