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2SB1412TLQ PDF预览

2SB1412TLQ

更新时间: 2024-11-23 08:35:51
品牌 Logo 应用领域
罗姆 - ROHM 晶体管
页数 文件大小 规格书
4页 186K
描述
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN

2SB1412TLQ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-63
包装说明:CPT3, SC-63, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:1.57
最大集电极电流 (IC):5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PSSO-G2JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):10 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Copper (Sn98Cu2)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SB1412TLQ 数据手册

 浏览型号2SB1412TLQ的Datasheet PDF文件第2页浏览型号2SB1412TLQ的Datasheet PDF文件第3页浏览型号2SB1412TLQ的Datasheet PDF文件第4页 
Low frequency transistor (20V,5A)  
2SB1412  
zFeatures  
zDimensions (Unit : mm)  
1) Low VCE(sat).  
2SB1412  
VCE(sat) = 0.35V (Typ.)  
(IC/IB = 4A / 0.1A)  
2) Excellent DC current gain characteristics.  
3) Complements the 2SD2118.  
zStructure  
Epitaxial planar type  
PNP silicon transistor  
(1) Base  
(2) Collector  
(3) Emitter  
ROHM : CPT3  
EIAJ : SC-63  
Denotes hFE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
30  
20  
6  
Unit  
VCBO  
VCEO  
VEBO  
V
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
5  
A(DC)  
A(Pulse)  
I
C
Collector current  
Collector power  
10  
1
1
W
2SB1412  
P
C
dissipation  
10  
W(Tc=25°C  
)
Junction temperature  
Storage temperature  
1 Single pulse, Pw=10ms  
Tj  
150  
°C  
°C  
Tstg  
55 to 150  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
30  
20  
6  
V
V
V
I
I
I
C
= −50  
= −1mA  
= −50  
µ
A
Collector-emitter breakdown voltage BVCEO  
C
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
E
µ
A
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
0.5  
1.0  
390  
µ
A
A
V
CB= −20V  
EB= −5V  
Emitter cutoff current  
I
µ
V
Collector-emitter saturation voltage  
V
0.35  
V
I
C
/I = −4A/ 0.1A  
B
h
82  
V
V
V
CE= −2V, I  
C
= −0.5A  
=50mA, f=100MHz  
=0A, f=1MHz  
DC current transfer ratio  
Transition frequency  
f
T
120  
60  
MHz  
pF  
CE= −6V, I  
E
Output capacitance  
Cob  
CB= −20V, I  
E
Measured using pulse current.  
www.rohm.com  
2009.12 - Rev.C  
1/3  
c
2009 ROHM Co., Ltd. All rights reserved.  

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