生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.46 |
其他特性: | BUILT IN BIAS RESISTOR | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 50 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 1.3 W | 最大功率耗散 (Abs): | 1.3 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 300 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1398 | PANASONIC |
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Silicon PNP epitaxial planer type(For low-frequency output amplification) | |
2SB1398-HW | PANASONIC |
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暂无描述 | |
2SB1398P | ETC |
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TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 5A I(C) | SIP | |
2SB1398Q | ETC |
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TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 5A I(C) | SIP | |
2SB1398-SZ | PANASONIC |
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Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1399 | HITACHI |
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Silicon PNP Triple Diffused | |
2SB1399 | RENESAS |
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Silicon PNP Triple Diffused | |
2SB1399-E | RENESAS |
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暂无描述 | |
2SB1400 | HITACHI |
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Silicon PNP Epitaxial | |
2SB1400 | SAVANTIC |
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Silicon PNP Power Transistors |