是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.65 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 32 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 功耗环境最大值: | 10 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN COPPER | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | VCEsat-Max: | 0.8 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1182/R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1182_15 | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
2SB1182D | SECOS |
获取价格 |
PNP Silicon General Purpose Transistor | |
2SB1182F5 | ROHM |
获取价格 |
Transistor, | |
2SB1182F5/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1182F5/PR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1182F5/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1182F5/QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1182GP | CHENMKO |
获取价格 |
Transistor, | |
2SB1182G-Q-AB3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor |