Datasheet > 2SB1182D

2SB1182D

更新时间： 2024-11-05 07:29:59

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	264K
描述
PNP Silicon General Purpose Transistor

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2SB1182D 数据手册

2SB1182D

PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

TO-252

6. 50Ć0. 15

5. 30Ć0. 10

2. 30 0. 10

FEATURES

0. 51 0. 05

The 2SB1182DX is designed for medium power amplifier application

Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)

RoHS Compliant Product

1. 20

0. 51 0. 10

0. 10

0. 80Ć0. 10

MARKING : 1182

(With Date Code)

0. 60 0. 10

2. 30 0. 10

0. 51

MAXIMUM RATINGS* TA=25 C unless otherwise noted

Parameter

Symbol

Value

Units

Collector-Base Voltage

VCBO

VCEO

-40

-32

-5

Collector-Emitter Voltage

Emitter-Base Voltage

VEBO

Collector Current -Continuous

Collector Current -Pulse,Pw=100mS

Collector Dissipation

-2

Junction and Storage Temperature

TJ, Tstg

+150,-55~+150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-40

-32

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CBO

Ic=-50µA, IE=0

V_(BR)CEOIc= -1mA,I_B=0

V_(BR)EBOI_E= -50µA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=-20V,I_E=0

-1

Emitter cut-off current

V_EB=-4V,I_C=0

-1

DC current gain

V_CE=-3V,I_C=-500mA

I_C=-500mA,I_B=-200mA

V_CE=-5V,Ic=500mA,f=100MHz

V_CB=-10V,f=1MHz

390

-800

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

-500

100

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

82 - 180

120 - 270

180 - 390

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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