2SB1172TX

更新时间： 2024-09-22 13:04:11

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管功率双极晶体管光电二极管放大器
页数	文件大小	规格书
3页	84K
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中文翻译

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数据手册

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2SB1172TX 数据手册

Power Transistors

2SB1172, 2SB1172A

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SD1742, 2SD742A

Unit: mm

7.0 0.3

3.5 0.2

0˚ to 0.15˚

3.0 0.2

2.0 0.2

■ Features

• High forward current transfer ratio h_FEwhich has satisfactory linearity

• Low collector-emitter saturation voltage V_CE(sat)

• I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

■ Absolute Maximum Ratings T_C= 25°C

1.1 0.1

0.75 0.1 0.4 0.1

Parameter

Symbol

Rating

−60

Unit

0.9 0.1

0˚ to 0.15˚

2.3 0.2

2SB1172

2SB1172A

2SB1172

2SB1172A

V_CBO

Collector-base voltage

(Emitter open)

4.6 0.4

−80

V_CEO

−60

Collector-emitter voltage

(Base open)

−80

1: Base

2: Collector

3: Emitter

I-G1 Package

Emitter-base voltage (Collector open) V_EBO

−5

Collector current

I_C

I_CP

P_C

−3

Peak collector current

Collector power dissipation

−5

Note) Self-supported type package is also prepared.

T_a= 25°C

1.3

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−60

−80

Typ

Max

Unit

2SB1172

2SB1172A

V_CEO

I_C= −30 mA, I_B= 0

Collector-emitter voltage

(Base open)

Base-emitter voltage

V_BE

I_CES

V_CE= −4 V, I_C= −3 A

V_CE= −60 V, V_BE= 0

V_CE= −80 V, V_BE= 0

V_CE= −30 V, I_B= 0

V_CE= −60 V, I_B= 0

V_EB= −5 V, I_C= 0

−1.8

−200

−300

−1

2SB1172

2SB1172A

2SB1172

2SB1172A

µA

Collector-emitter cutoff

current (E-B short)

I_CEO

µA

Collector-emitter cutoff

current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_EBO

h_FE1

V_CE= −4 V, I_C= −1 A

V_CE= −4 V, I_C= −3 A

250



h_FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −3 A, I_B= − 0.375 A

−1.2

MHz

µs

f_T

t_on

t_stg

t_f

V_CE= −10 V, I_C= − 0.5 A, f = 10 MHz

0.5

1.2

0.3

I_C= −1 A, I_B1= − 0.1 A, I_B2= 0.1 A

V_CC= −50 V

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE2

70 to 150

120 to 250

Publication date: February 2003

SJD00048AED

12 3

中文翻译

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与2SB1172TX相关器件

型号	品牌	获取价格	描述	数据表
2SB1173	PANASONIC	获取价格	AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A
2SB1173A	PANASONIC	获取价格	AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A
2SB1173AH	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1173AP	PANASONIC	获取价格	Transistor
2SB1173AQ	PANASONIC	获取价格	Transistor
2SB1173AR	PANASONIC	获取价格	Transistor
2SB1173ATX	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1173H	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1173P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 4A I(C) \| TO-221VAR
2SB1173Q	PANASONIC	获取价格	Transistor

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