生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 120 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 82 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1130MQ | ROHM |
获取价格 |
1500mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1130MR | ROHM |
获取价格 |
暂无描述 | |
2SB1131 | SANYO |
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Strobe,High-Current Switching Applications | |
2SB1131R | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-92VAR | |
2SB1131-R | ONSEMI |
获取价格 |
5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN | |
2SB1131S | ONSEMI |
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5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN | |
2SB1131T | ONSEMI |
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5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN | |
2SB1132 | TYSEMI |
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Low VCE(sat) Compliments to 2SD1664 Collector-Base Voltage VCBO -40 V | |
2SB1132 | WINNERJOIN |
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TRANSISTOR (PNP) | |
2SB1132 | WILLAS |
获取价格 |
SOT-89 Plastic-Encapsulate Transistors |