Datasheet > 2SB1132

2SB1132

更新时间： 2024-09-23 07:29:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
3页	344K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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2SB1132 数据手册

2SB1132

TRANSISTOR (PNP)

FEATURES

Low V_CE(sat): -0.2V(Typ) I_C/I_B=-500mA/-50mA

Compliments 2SD1664

SOT-89

1. ^BASE

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-40

Units

2. ^COLLECTOR

3. ^EMITTER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-32

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-1

P_C

500

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

-40

-32

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-50μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-50μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=-20V,I_E=0

-0.5

390

-0.5

μA

Emitter cut-off current

V_EB=-4V,I_C=0

DC current gain

V_CE=-3V,I_C=-100mA

I_C=-500mA,I_B=-50mA

V_CE=-5V,I_C=-50mA,f=30MHz

V_CB=-10V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

-0.2

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

82-180

BAP

120-270

BAQ

180-390

BAR

Range

Marking

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3

中文翻译

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