Datasheet > 2SB1132

2SB1132

更新时间： 2024-09-24 14:54:15

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1551K
描述
SOT-89-3L

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数据手册

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2SB1132 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SB1132 TRANSISTOR (PNP)

SOT-89-3L

1. ^BASE

FEATURES

Low V_CE(sat)

Compliments 2SD1664

2. ^COLLECTOR

3. ^EMITTER

MARKING

BAP

BAQ

BAR

Solid dot = Green molding

compound device.

180-390

82-180

120-270

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-40

-32

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Pulsed Collector Current

Collector Power Dissipation

-1

I_CP*

-2

P_C

500

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~150

℃

*Single pulse, PW=100ms

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V_(BR)CBOI_C=-50μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-50μA,I_C=0

-40

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-32

-5

I_CBO

I_EBO

h_FE

V_CB=-20V,I_E=0

-0.5

390

-0.5

μA

Emitter cut-off current

V_EB=-4V,I_C=0

DC current gain

V_CE=-3V,I_C=-100mA

I_C=-500mA,I_B=-50mA

V_CE=-5V,I_C=-50mA,f=30MHz

V_CB=-10V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

-0.2

150

MHz

Collector output capacitance

CLASSIFICATION OF h_FE

Rank

C_ob

82-180

120-270

180-390

Range

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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