Datasheet > 2SB1132

2SB1132

更新时间： 2024-02-08 01:05:25

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
3页	546K
描述
SOT-89 Plastic-Encapsulate Transistors

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中文翻译

获取价格

技术参数
数据手册

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2SB1132 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

2SB1132 数据手册

WILLAS

2SB1132

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP)

FEATURES

SOT-89

1. ^BASE

Low V_CE(sat)

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

2. ^COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-40

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-32

-5

Continuous Collector Current

Pulsed Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

-1

I_CP*

-2

P_C

500

150

-55~150

℃

T_J

T_stg

*Single pulse, PW=100ms

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V_(BR)CBOI_C=-50μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-50μA,I_C=0

-40

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-32

-5

I_CBO

I_EBO

h_FE

V_CB=-20V,I_E=0

-0.5

390

-0.5

μA

Emitter cut-off current

V_EB=-4V,I_C=0

DC current gain

V_CE=-3V,I_C=-100mA

I_C=-500mA,I_B=-50mA

V_CE=-5V,I_C=-50mA,f=30MHz

V_CB=-10V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

-0.2

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

82-180

BAP

120-270

BAQ

180-390

BAR

Range

Marking

2012-10

WILLAS ELECTRONIC CORP.

12 3

中文翻译

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