生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.32 | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 320 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1131-R | ONSEMI |
获取价格 |
5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN |
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2SB1131S | ONSEMI |
获取价格 |
5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN |
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2SB1131T | ONSEMI |
获取价格 |
5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN |
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2SB1132 | TYSEMI |
获取价格 |
Low VCE(sat) Compliments to 2SD1664 Collector-Base Voltage VCBO -40 V |
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2SB1132 | WINNERJOIN |
获取价格 |
TRANSISTOR (PNP) |
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2SB1132 | WILLAS |
获取价格 |
SOT-89 Plastic-Encapsulate Transistors |
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2SB1132 | LGE |
获取价格 |
暂无描述 |
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2SB1132 | ROHM |
获取价格 |
Medium Power Transistor |
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2SB1132 | HTSEMI |
获取价格 |
TRANSISTOR (PNP) |
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2SB1132 | KEXIN |
获取价格 |
Medium Power Transistor |
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