Datasheet > 2SB1132

2SB1132

更新时间： 2024-04-09 19:02:40

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	409K
描述
32V,1A,General Purpose PNP Bipolar Transistor

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中文翻译

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数据手册

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2SB1132 数据手册

PNP Silicon Epitaxial Planar Transistor

2SB1132

Features



Epitaxial planar die construction

Complimentary to T2SD1664

Ultra-small surface mount package

Mechanic al Data



Case: SOT-89

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-89

Ordering Information

Part Number

Package

SOT-89

Shipping Quantity

Marking Code

2SB1132

1000 pcs / Tape & Reel

BAP/BAQ/BAR

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Collector-Base Breakdown Voltage

Value

Unit

V_CBO

V_CEO

V_EBO

-40

-32

-5

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

-1

Collector Current (Continuous)

I_C

-2

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

R_θJA

T_J

500

C/W

°C

Thermal Resistance (Junction-to-Ambient)

Operating junction Temperature

Storage Temperature Range

250

-55 ~ +150

T_STG

°C

STM0234A: December 2021

www.gmesemi.com

12 3 4

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