Datasheet > 2SB1116_15

2SB1116_15

更新时间： 2024-09-16 01:21:39

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SECOS		/
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描述
PNP Plastic Encapsulated Transistor

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数据手册

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2SB1116_15 数据手册

2SB1116

-1A , -60V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

ꢀ

High current surface mount PNP silicon switching transistor

for Load management in portable applications

Top View

C B

CLASSIFICATION OF h_FE

2SB1116-L

2SB1116-K

200~400

2AB1116-U

300~600

Product-Rank

Range

135~270

MARKING

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.40

0.08

Max.

0.18

0.60

0.20

1116

2.70

2.10

1.20

0.89

1.78

0.30

3.04

2.80

1.60

1.40

2.04

0.50

Collector

0.6 REF.

0.85

1.15

PACKAGE INFORMATION

Package

MPQ

Leader Size

7 inch

Base

SOT-23

Emitter

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

-60

-50

-6

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

-1

350

P_C

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

I_C= -100µA, I_E=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-60

-50

I_C= -1mA, I_B=0

-6

-0.1

600

I_E= -100µA, I_C=0

V_CB= -60V, I_E=0

µA

Emitter Cut-Off Current

I_EBO

V_EB= -6V, I_C=0

135

V_CE= -2V, I_C= -100mA

V_CE= -2V, I_C= -1A

I_C= -1A, I_B= -50mA

V_CE= -2V, I_C= -50mA

DC Current Gain

h_FE

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base -emitter voltage

Transition frequency

Collector Output Capacitance

Turn-on time

V_CE(sat)

V_BE(sat)

V_BE

f_T

-0.3

-1.2

-0.7

-0.6

MHz V_CE= -2V,I_C= -100mA

C_ob

t_ON

0.07

0.7

0.07

V_CB= -10V, I_E=0, f=1MHz

V_CC= -10V,I_C= -100mA,

I_B1=-I_B2= -0.01A, V_BE(off)=2~3V

Storage time

t_S

µS

Fall time

t_f

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

27-Aug-2012 Rev. A

Page 1 of 1

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