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2SB1079-E PDF预览

2SB1079-E

更新时间: 2024-01-20 01:31:34
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管放大器局域网
页数 文件大小 规格书
7页 146K
描述
20A, 100V, PNP, Si, POWER TRANSISTOR, TO-3P, 3 PIN

2SB1079-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Lifetime Buy零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.71
外壳连接:COLLECTOR最大集电极电流 (IC):20 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):1000JESD-30 代码:R-PSFM-T3
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SB1079-E 数据手册

 浏览型号2SB1079-E的Datasheet PDF文件第2页浏览型号2SB1079-E的Datasheet PDF文件第3页浏览型号2SB1079-E的Datasheet PDF文件第4页浏览型号2SB1079-E的Datasheet PDF文件第5页浏览型号2SB1079-E的Datasheet PDF文件第6页浏览型号2SB1079-E的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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