Datasheet > 2SB1085_15

2SB1085_15

更新时间： 2024-09-25 01:16:47

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	162K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB1085_15 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1085

DESCRIPTION

·With TO-220 package

·Complement to type 2SD1562

·Low collector saturation voltage

APPLICATIONS

·Designed for use in low frequency

power amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-120

-5

UNIT

Open emitter

Open base

Open collector

-1.5

I_CM

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

-3.0

P_C

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3

中文翻译

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