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2SB108100MA

更新时间: 2024-01-11 13:11:08
品牌 Logo 应用领域
士兰微 - SILAN 肖特基二极管
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描述
LOW IR SCHOTTKY BARRIER DIODE CHIPS

2SB108100MA 数据手册

  
2SB108100MA  
2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS  
DESCRIPTION  
Ø
2SB108100MA is scahottky barrier diode chi  
fabricated in silicon epitaxial planar technology;  
Due to special schottky barrier structure, thcehips  
have very low reverse leakage current (icaltyp  
Ø
IR=0.002mA@ Vr=100V  
)
and maximum °C150  
operation junction temperature;  
Ø
Ø
Ø
Ø
Ø
Low power losses, high efficiency;  
Guard ring construction for transient protection;  
High ESD capability;  
Chip Topography and Dimensions  
La: Chip Size: 1080mm;  
Lb: Pad Size: 985mm;  
High surge capability;  
Packaged products are widely used in switching  
power suppliers, polarity protection circuits and  
other electronic circuits;  
ORDERING SPECIFICATIONS  
Product Name  
Specification  
For Axial leads package  
Ø
Chip Size: 10m8m0 X 1080mm;  
Ø
Chip Thickness: 280±20mm;  
2SB108100MAYY  
ABSOLUTE MAXIMUM RATINGS  
Parameters  
Symbol  
Ratings  
Unit  
Maximum Repetitive Peak Reverse Voltage  
V
100  
2
V
RRM  
Average Forward Rectified Current  
Peak Forward Surge Current@8.3ms  
Maximum Operation Junction Temperature  
Storage Temperature Range  
I
A
A
FAV  
I
50  
FSM  
T
J
150  
°C  
°C  
T
•40~150  
STG  
ELECTRICAL CHARACTERISTICS (Tamb=25ć)  
Parameters  
Reverse Voltage  
Symbol  
Test Conditions  
I =1mA  
Min.  
100  
••  
Max.  
••  
Unit  
V
V
BR  
R
Forward Voltage  
Reverse Current  
V
F
I =2A  
F
0.85  
1
V
I
V =100V  
R
••  
mA  
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
REV:1.0  
2007.04.27  
Http: www.silan.com.cn  
Page 1 of 1  

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