Datasheet > 2SB108100MA

2SB108100MA

更新时间： 2024-01-19 14:38:10

品牌	Logo	应用领域
士兰微 - SILAN		肖特基二极管
页数	文件大小	规格书
1页	19K
描述
LOW IR SCHOTTKY BARRIER DIODE CHIPS

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2SB108100MA 数据手册

2SB108100MA

2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

2SB108100MA is scahottky barrier diode chi

fabricated in silicon epitaxial planar technology;

Due to special schottky barrier structure, thcehips

have very low reverse leakage current (icaltyp

I_R=0.002mA@ Vr=100V

)

and maximum °C150

operation junction temperature;

Low power losses, high efficiency;

Guard ring construction for transient protection;

High ESD capability;

Chip Topography and Dimensions

La: Chip Size: 1080mm;

Lb: Pad Size: 985mm;

High surge capability;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

ORDERING SPECIFICATIONS

Product Name

Specification

For Axial leads package

Chip Size: 10m8m0 X 1080mm;

Chip Thickness: 280±20mm;

2SB108100MAYY

ABSOLUTE MAXIMUM RATINGS

Parameters

Symbol

Ratings

Unit

Maximum Repetitive Peak Reverse Voltage

100

RRM

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

FAV

FSM

150

°C

•40~150

STG

ELECTRICAL CHARACTERISTICS (Tamb=25ć)

Parameters

Reverse Voltage

Symbol

Test Conditions

I =1mA

Min.

100

••

Max.

••

Unit

Forward Voltage

Reverse Current

I =2A

0.85

V =100V

••

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.0

2007.04.27

Http: www.silan.com.cn

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