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2SB108040ML PDF预览

2SB108040ML

更新时间: 2024-01-20 18:37:08
品牌 Logo 应用领域
士兰微 - SILAN 肖特基二极管
页数 文件大小 规格书
1页 17K
描述
SCHOTTKY BARRIER DIODE CHIPS

2SB108040ML 数据手册

  
2SB108040ML  
2SB108040ML SCHOTTKY BARRIER DIODE CHIPS  
DESCRIPTION  
Ø
2SB108040ML is a schottky barrier diode chips  
fabricated in silicon epitaxial planar technology;  
Low power losses, high efficiency;  
Guard ring construction for transient protection;  
High ESD capability;  
Ø
Ø
Ø
Ø
Ø
High surge capability;  
Packaged products are widely used in switching  
power suppliers, polarity protection circuits and  
other electronic circuits.;  
Chip Topography and Dimensions  
La: Chip Size: 1080mm;  
Lb: Pad Size: 985mm;  
Ø
Chip Size:10m8m0 X 1080mm;  
Ø
Chip Thickness: 280±20mm;  
ORDERING SPECIFICATIONS  
Product Name  
Specification  
For axial leads package  
2SB108040MLYY  
ABSOLUTE MAXIMUM RATINGS  
Parameters  
Symbol  
Ratings  
Unit  
Maximum Repetitive Peak Reverse Voltage  
Average Forward Rectified Current  
Peak Forward Surge Current@8.3ms  
Maximum Operation Junction Temperature  
Storage Temperature Range  
V
40  
2
V
A
RRM  
I
FAV  
I
50  
125  
A
FSM  
T
J
°C  
°C  
T
•40~125  
STG  
ELECTRICAL CHARACTERISTICS (Tamb=25°C)  
Parameters  
Reverse Voltage  
Symbol  
Test Conditions  
I =1mA  
Min.  
40  
••  
Max.  
••  
Unit  
V
V
BR  
R
Forward Voltage  
Reverse Current  
V
F
I =2A  
F
0.55  
1
V
I
V =40V  
R
••  
mA  
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
REV:1.0  
2007.04.27  
Http: www.silan.com.cn  
Page 1 of 1  

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