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2SB1064_2014 PDF预览

2SB1064_2014

更新时间: 2024-11-13 01:20:03
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
3页 155K
描述
Silicon PNP Power Transistors

2SB1064_2014 数据手册

 浏览型号2SB1064_2014的Datasheet PDF文件第2页浏览型号2SB1064_2014的Datasheet PDF文件第3页 
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB1064  
DESCRIPTION  
·With TO-220 package  
·Complement to type 2SD1505  
·Low collector saturation voltage  
APPLICATIONS  
·Designed for use in low frequency  
power amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
-60  
UNIT  
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
-50  
V
Open collector  
-5  
V
-3  
A
ICM  
Collector current-peak  
Base current  
-4.5  
-0.5  
30  
A
IB  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
Tj  
150  
-55~150  
Tstg  

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