生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.77 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 82 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 功耗环境最大值: | 10 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 70 MHz | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1065/QR | ROHM |
获取价格 |
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB1065_15 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1065_2014 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1065N | ISC |
获取价格 |
Transistor | |
2SB1065P | ISC |
获取价格 |
Transistor | |
2SB1065R | ISC |
获取价格 |
暂无描述 | |
2SB1066M | ROHM |
获取价格 |
Epitaxial Planar PNP Silicon Transistors | |
2SB1066M/N | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1066M/NP | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1066M/NQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |