2SB1065R

更新时间： 2024-09-22 12:57:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	122K
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中文翻译

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2SB1065R 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1065

DESCRIPTION

·With TO-126 package

·Complement to type 2SD1506

·Low collector saturation voltage

APPLICATIONS

·For use in low frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-60

UNIT

Open base

-50

Open collector

-5

-3

I_CM

Collector current-peak

Total power dissipation

Junction temperature

Storage temperature

-4.5

P_D

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

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