Datasheet > 2SA965-Y,T6F(J

2SA965-Y,T6F(J

更新时间： 2024-01-31 22:21:32

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	144K
描述
TRANS PNP 800MA 120V TO226-3

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技术参数
数据手册

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2SA965-Y,T6F(J 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.78	Base Number Matches：	1

2SA965-Y,T6F(J 数据手册

2SA965

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA965

Power Amplifier Applications

Driver-Stage Amplifier Applications

Unit: mm

•

Complementary to 2SC2235.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−120

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−800

-80

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

900

150

JEDEC

JEITA

TO-92MOD

stg

−55 to 150

―

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4

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