Datasheet > 2SA966

2SA966

更新时间： 2024-09-25 14:53:23

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	602K
描述
双极型晶体管

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中文翻译

获取价格

技术参数
数据手册

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2SA966 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	1.5	DC current gain - Min：	100
DC current gain - Max：	320	Transition frequency：	120
Package：	TO-92L	Storage Temperature Range：	-55-150
class：	Transistors

2SA966 数据手册

2SA966

TO-92MOD Transistor (PNP)

1. EMITTER

TO-92MOD

5.800

6.200

2. COLLECTOR

3. BASE

8.400

8.800

0.900

1.100

0.400

0.600

Features

13.800

14.200

Complementary to 2SC2236 and

3 Watts output Applications.

1.500 TYP

2.900

3.100

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted )

0.000

0.380

1.600

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

0.400

0.500

4.700

5.100

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-30

1.730

2.030

4.000

-5

Dimensions in inches and (millimeters)

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-1.5

0.9

℃

T_J

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test

conditions

MIN

-30

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -1mA , I_E=0

I_C= -10mA ,I_B=0

I_E= -1mA, I_C=0

V_CB= -30V, I_E=0

-0.1

320

-2

μA

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

DC current gain

h_FE

V_CE=-2V, I_C= -500mA

I_C= -1.5 A, I_B= -0.03A

I_C= -500mA,V_CE=-2V

100

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-1

Transition frequency

_CE= -2V, I_C=-500mA

120

MHz

f _T

Collector output capacitance

C_ob

V_CB=-10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE

Rank

Range

100-200

160-320

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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与2SA966相关器件

型号	品牌	获取价格	描述	数据表
2SA966_07	TOSHIBA	获取价格	Audio Power Amplifier Applications
2SA966-BP	MCC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2SA966O	MCC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2SA966-O	TOSHIBA	获取价格	TRANSISTOR 1500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN, BIP General P
2SA966-O(TPE6)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,1.5A I(C),TO-92VAR
2SA966-O(TPE6,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,1.5A I(C),TO-92VAR
2SA966O-BP	MCC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2SA966Y	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 1.5A I(C) \| TO-92VAR
2SA966-Y	TOSHIBA	获取价格	TRANSISTOR 1500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN, BIP General P
2SA966-Y(TPE6)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,1.5A I(C),TO-92VAR