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2SA966_07 PDF预览

2SA966_07

更新时间: 2024-11-12 03:56:27
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器
页数 文件大小 规格书
4页 121K
描述
Audio Power Amplifier Applications

2SA966_07 数据手册

 浏览型号2SA966_07的Datasheet PDF文件第2页浏览型号2SA966_07的Datasheet PDF文件第3页浏览型号2SA966_07的Datasheet PDF文件第4页 
2SA966  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA966  
Audio Power Amplifier Applications  
Unit: mm  
Complementary to 2SC2236 and 3-W output applications.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
30  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
I
1.5  
A
C
Emitter current  
I
1.5  
A
E
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
900  
mW  
°C  
°C  
C
T
150  
j
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-92MOD  
TOSHIBA  
2-5J1A  
Weight: 0.36 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
1
2006-11-09  

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