Datasheet > 2SA966-O(TPE6,F)

2SA966-O(TPE6,F)

更新时间： 2024-11-13 05:18:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	120K
描述
TRANSISTOR,BJT,PNP,30V V(BR)CEO,1.5A I(C),TO-92VAR

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技术参数
数据手册

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2SA966-O(TPE6,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	1.5 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.9 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SA966-O(TPE6,F) 数据手册

2SA966

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA966

Audio Power Amplifier Applications

Unit: mm

•

Complementary to 2SC2236 and 3-W output applications.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−30

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−1.5

Base current

-0.15

900

Collector power dissipation

Junction temperature

Storage temperature range

°C

150

stg

−55 to 150

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

TO-92MOD

―

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2009-12-21

12 3 4

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