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2SA966 PDF预览

2SA966

更新时间: 2024-01-16 14:33:57
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 131K
描述
TRANSISTOR (PNP)

2SA966 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.85Is Samacsys:N
最大集电极电流 (IC):1.5 A基于收集器的最大容量:30 pF
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):160JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.9 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
VCEsat-Max:2 VBase Number Matches:1

2SA966 数据手册

  
RoHS  
2SA966  
TO-92MOD  
2SA966 TRANSISTOR (PNP)  
1. EMITTER  
FEATURE  
Power dissipation  
2. COLLECTOR  
3. BASE  
PCM : 0.9  
W(Tamb=25)  
Collector current  
CM : -1.5  
Collector-base voltage  
(BR)CBO : -30  
I
A
V
123  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= -1mA , IE=0  
MIN  
-30  
-30  
-5  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
IC= -10 mA , IB=0  
IE= -1mA, IC=0  
V
V
VCB= -30 V , IE=0  
VEB= -5V , IC=0  
VCE=-2 V, IC= -500mA  
IC= -1.5 A, IB= -0.03A  
IC= -500 mA, VCE= -2V  
-0.1  
-0.1  
320  
-2  
µA  
µA  
IEBO  
hFE(1)  
100  
DC current gain  
VCE(sat)  
VBE  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
-1  
VCE= -2 V, IC= -500mA  
100  
MHz  
Transition frequency  
f T  
CLASSIFICATION OF hFE  
(1)  
Rank  
O
Y
WEJ ELECTRONIC CO.,LTD  
100-200  
160-320  
Range  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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