是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, MINIMOLD PACKAGE-3 | Reach Compliance Code: | compliant |
风险等级: | 5.6 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3/e6 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN/TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 180 MHz |
VCEsat-Max: | 0.3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA812M6-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346 | |
2SA812-M6-HF | KEXIN |
获取价格 |
PNP Transistors | |
2SA812M6-T1B | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
2SA812M6-T1B-A | RENESAS |
获取价格 |
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN | |
2SA812M6-T1B-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346 | |
2SA812M6-T2B | RENESAS |
获取价格 |
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN | |
2SA812M6-T2B-A | RENESAS |
获取价格 |
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN | |
2SA812-M6-TP | MCC |
获取价格 |
暂无描述 | |
2SA812M6-TP | MCC |
获取价格 |
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | |
2SA812-M6-TP-HF | MCC |
获取价格 |
Small Signal Bipolar Transistor, |