2SA812-M7

更新时间： 2024-11-20 07:29:55

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管光电二极管
页数	文件大小	规格书
2页	199K
描述
PNP Silicon Epitaxial Transistors

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中文翻译

获取价格

数据手册

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2SA812-M7 数据手册

2SA812-M4

2SA812-M5

2SA812-M6

2SA812-M7

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

PNP Silicon

Epitaxial Transistors

RoHS Compliant. See ordering information)

xꢀ High DC Current Gain:90Љ h_FEЉ600.(V_CE=-6.0V, I_C=-1mA)

xꢀ High voltage: V_CEO=-50V

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

SOT-23

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

-50

Unit

-60

-5.0

-100

P_C

Collector power dissipation

Junction Temperature

200

T_J

-55 to +150

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

I_CBO

Collector Cutoff Current

(V_CB=-60Vdc,I_E=0)

---

-0.1

uAdc

DIMENSIONS

I_EBO

Emitter Cutoff Current

(V_EB=-5.0Vdc, I_C=0)

INCHES

DIM

MIN

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

ON CHARACTERISTICS

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

h_F

V_CE(sat)

V_BE

DC Current Gain*

---

(I_C=-1.0mAdc, V_CE=-6.0Vdc)

Collector Saturation Voltage*

(I_C=-100mAdc, I_B=-10mAdc)

Base Emitter Voltage*

---

600

-0.3

-0.68

---

Vdc

MHz

(V_CE=-6.0Vdc, I_C=-1.0mAdc)

Gain Bandwidth product

(V_CE=-6.0Vdc, I_E=-10mAdc)

---

.085

.37

f_T

180

Suggested Solder

Pad Layout

CLASSIFICATION OF hFE

.031

.800

Marking

200-400

300-600

.035

.900

Range

90-180

135-270

.079

2.000

inches

.037

.950

.037

.950

www.mccsemi.com

Revision: A

2011/01/01

1 of 2

中文翻译

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与2SA812-M7相关器件

型号	品牌	获取价格	描述	数据表
2SA812M7-A	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
2SA812M7-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
2SA812-M7-HF	KEXIN	获取价格	PNP Transistors
2SA812M7-L	RENESAS	获取价格	2SA812M7-L
2SA812M7-T1B	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA812M7-T1B-A	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
2SA812M7-T1B-AT	RENESAS	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
2SA812M7-T2B	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA812M7-T2B-A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA812-M7-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO

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