Datasheet > 2SA812M6-AT

2SA812M6-AT

更新时间： 2024-11-24 14:49:43

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	236K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA812M6-AT 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	0.1 A	配置：	Single
最小直流电流增益 (hFE)：	200	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SA812M6-AT 数据手册

DATA SHEET

SILICON TRANSISTOR

2SA812

PNP SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

• Complementary to 2SC1623

<R>

PACKAGE DRAWING (Unit: mm)

• High DC Current Gain: h^FE= 200 TYP. (VCE = −6.0 V, IC = −1.0 mA)

• High Voltage: V^CEO= −50 V

2.8 ꢀ.2

+ꢀ.1

ꢀ.65

–ꢀ.15

1.5 TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Total Power Dissipation

Junction Temperature

VCBO

V^CEO

V^EBO

I^C

P^T

T^j

−60

−50

−5.0

−100

200

°C

150

Storage Temperature Range

T^stg

−55 to +150 °C

Marking

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

ICBO

MIN.

TYP.

MAX.

−0.1

600

UNIT

TEST CONDITIONS

VCB = −60 V, IE = 0 A

μA

IEBO

VEB = −5.0 V, IC = 0 A

hFE

200

−0.18

−0.62

180

VCE = −6.0 V, IC = −1.0 mA^Note

IC = −100 mA, IB = −10 mA

VCE = 6.0 V, IC = −1.0 mA

VCE = −6.0 V, IE = 10 mA

VCB = −10 V, IE = 0 A, f = 1.0 MHz

Collector Saturation Voltage

Base to Emitter Voltage

Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE

−0.3

−0.68

−0.58

MHz

<R>

Cob

4.5

Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%

h^FECLASSIFICATION

Marking

200 to 400

hFE

90 to 180

135 to 270

300 to 600

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17119EJ4V0DS00 (4th edition)

Date Published November 2005 NS CP(K)

Printed in Japan

1984

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4

中文翻译

下载PDF

与2SA812M6-AT相关器件

型号	品牌	获取价格	描述	数据表
2SA812-M6-HF	KEXIN	获取价格	PNP Transistors
2SA812M6-T1B	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
2SA812M6-T1B-A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA812M6-T1B-AT	RENESAS	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
2SA812M6-T2B	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA812M6-T2B-A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA812-M6-TP	MCC	获取价格	暂无描述
2SA812M6-TP	MCC	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2SA812-M6-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SA812M7	TRSYS	获取价格	Transistor

与2SA812M6-AT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA812M6-AT

2SA812M6-AT 技术参数

2SA812M6-AT 数据手册

与2SA812M6-AT相关器件

与2SA812M6-AT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA812M6-AT

2SA812M6-AT 技术参数

2SA812M6-AT 数据手册

与2SA812M6-AT相关器件

与2SA812M6-AT相关文章

您还可以找

您在本页遇到什么问题？