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2SA812M6-T1B-AT PDF预览

2SA812M6-T1B-AT

更新时间: 2024-11-20 14:46:23
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 327K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346

2SA812M6-T1B-AT 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:N最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):200
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

2SA812M6-T1B-AT 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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