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2SA1832 PDF预览

2SA1832

更新时间: 2024-11-15 07:29:47
品牌 Logo 应用领域
SECOS 晶体晶体管光电二极管
页数 文件大小 规格书
2页 472K
描述
PNP Silicon Plastic Encapsulated Transistor

2SA1832 数据手册

 浏览型号2SA1832的Datasheet PDF文件第2页 
2SA1832  
-0.15A , -50V  
PNP Silicon Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-523  
FEATURES  
High Voltage and High Current  
Excellent hFE Linearity  
Complementary to 2SC4738  
A
M
3
3
Top View  
C B  
CLASSIFICATION OF hFE  
1
1
2
L
2
K
F
2SA1832-Y  
120~240  
SY  
2SA1832-GR  
200~400  
SG  
Product-Rank  
E
Range  
D
Marking  
H
J
G
Millimeter  
Millimeter  
Min. Max.  
REF.  
REF.  
Min.  
Max.  
PACKAGE INFORMATION  
A
B
C
D
E
F
1.5  
1.45  
0.75  
0.7  
0.9  
0.15  
1.7  
G
H
J
K
L
-
0.1  
1.75  
0.85  
0.9  
1.1  
0.25  
0.55 REF.  
0.1  
Package  
MPQ  
LeaderSize  
0.2  
-
0.5 TYP.  
0.25 0.325  
SOT-523  
3K  
7’ inch  
M
Collector  
  
  
Base  
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Ratings  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current - Continuous  
Collector Power Dissipation  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
VCBO  
VCEO  
VEBO  
IC  
PC  
RθJA  
TJ, TSTG  
-50  
-50  
-5  
-150  
100  
125  
V
V
V
mA  
mW  
°C / W  
°C  
-55~125  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
Parameter  
Collector to Base Breakdown Voltage V(BR)CBO  
Collector to Emitter Breakdown  
Emitter to Base Breakdown Voltage  
Collector Cut - off Current  
Symbol  
Min.  
-50  
-50  
-5  
Typ.  
Max.  
-
-
-
Unit  
V
V
V
nA  
Test Conditions  
IC= -100A, IE=0  
IC= -1mA, IB=0  
IE= -100A, IC=0  
VCB= -50V, IE=0  
-
-
-
-
V(BR)CEO  
V(BR)EBO  
ICBO  
-
-100  
Emitter Cut - off Current  
DC Current Gain  
IEBO  
hFE  
-
-
-
-100  
400  
nA  
VEB= -5V, IC=0  
120  
VCE= -6V, IC= -2mA  
Collector to Emitter  
Saturation Voltage  
VCE(sat)  
-
-
-0.3  
V
IC= -100mA, IB= -10mA  
Transition Frequency  
Collector Output Capacitance  
fT  
Cob  
80  
-
-
4
-
7
MHz  
pF  
VCE= -10V, IC= -1mA  
VCB= -10V, IE=0, f=1MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
25-Jan-2011 Rev. A  
Page 1 of 2  

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