是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | unknown |
Factory Lead Time: | 12 weeks | 风险等级: | 5.75 |
最大集电极电流 (IC): | 0.15 A | 基于收集器的最大容量: | 7 pF |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 功耗环境最大值: | 0.1 W |
最大功率耗散 (Abs): | 0.1 W | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1832GRTE85L | TOSHIBA |
获取价格 |
TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
2SA1832-GR-TP | MCC |
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C | |
2SA1832-GR-TP-HF | MCC |
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Small Signal Bipolar Transistor, | |
2SA1832O | ETC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-416 | |
2SA1832-O | KEXIN |
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PNP Transistors | |
2SA1832OTE85L | TOSHIBA |
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TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
2SA1832Y | WEITRON |
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Small Signal Bipolar Transistor | |
2SA1832-Y | TOSHIBA |
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Audio Frequency General Purpose Amplifier Applications | |
2SA1832-Y | KEXIN |
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PNP Transistors | |
2SA1832-Y(5LALPS,F | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |