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2SA1834/S PDF预览

2SA1834/S

更新时间: 2024-11-15 12:58:15
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 78K
描述
Small Signal Bipolar Transistor, 15A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon

2SA1834/S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.64最大集电极电流 (IC):15 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):270JESD-30 代码:R-PSIP-T3
JESD-609代码:e2元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:PNP功耗环境最大值:10 W
最大功率耗散 (Abs):10 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.25 V
Base Number Matches:1

2SA1834/S 数据手册

 浏览型号2SA1834/S的Datasheet PDF文件第2页浏览型号2SA1834/S的Datasheet PDF文件第3页浏览型号2SA1834/S的Datasheet PDF文件第4页 
2SA1834  
Transistors  
Low VCE(sat) Transistor (Strobe flash)  
(20V, 10A)  
2SA1834  
z
(Unit : mm)  
External dimentions  
zFeatures  
1) Low saturation voltage,  
CPT3  
6.5  
5.1  
typically VCE(sat) = 0.16V at IC / IB= 4A / 50mA.  
2) High current capacity, typically IC= –10A for DC  
operation and –15A for 10ms pulse.  
3) Complements the 2SC5001.  
2.3  
0.5  
0.75  
z
Packaging specifications and hFE  
0.65  
Type  
2SA1834  
0.9  
(1)  
2.3  
(1)Base  
2.3  
(3)  
(2)  
0.5  
1.0  
Package  
CPT3  
RS  
(2)Collector  
(3)Emitter  
hFE  
Code  
TL  
Basic ordering unit (pieces)  
2500  
z
(Ta=25 C)  
Absolute maximum ratings  
°
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
30  
20  
6  
V
V
I
C
10  
15  
A
Collector current  
I
CP  
A
Base current  
I
B
2  
A
1
W
Collector power dissipation  
P
C
10  
W(Tc=25°C  
)
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Single pulse Pw=10ms  
z
(Ta=25 C)  
Electrical characteristics  
°
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
30  
20  
6  
V
V
I
I
I
C
=−50µA  
=−1mA  
C
V
E
=−50µA  
CB=−20V  
EB=−5V  
I
CBO  
1  
1  
0.25  
1.2  
560  
µA  
µA  
V
V
V
Emitter cutoff current  
I
EBO  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
0.16  
0.9  
150  
220  
I
I
C
/I  
/I  
B
=−4A/0.05A  
=−4A/0.05A  
V
BE(sat)  
V
C
B
hFE1  
hFE2  
fT  
180  
82  
MHz  
pF  
V
V
V
V
CE=−2V , I  
CE=−2V , I  
CE=−5V , I  
C
=−0.5A  
=−4A  
DC current transfer ratio  
C
Transition frequency  
Output capacitance  
E
=1.5A , f=50MHz  
=0A , f=1MHz  
Cob  
CB=−10V , I  
E
Measured using pulse current.  
Rev.A  
1/3  

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