Datasheet > 2SA1832_07

2SA1832_07

更新时间： 2024-11-15 04:25:51

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
2页	99K
描述
Audio Frequency General Purpose Amplifier Applications

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中文翻译

获取价格

数据手册

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2SA1832_07 数据手册

Transys

Electronics

I M I T E D

SOT-523 Plastic-Encapsulated Transistors

SOT-523

2SA1832 TRANSISTOR (PNP)

1. BASE

2. EMITTER

FEATURES

Power dissipation

3. COLLECTOR

P_CM

: 0.1

W (Tamb=25℃)

Collector current

I_CM

: -0.15

Collector-base voltage

V_(BR)CBO: -50

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=-100µA, I_E=0

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-1mA, I_B=0

I_E=-100µA, I_C=0

V_CB=-50V, I_E=0

-0.1

400

-0.3

µA

I_EBO

Emitter cut-off current

V_EB=-5V, I_C=0

h_FE(1)

DC current gain

V_CE=-6V, I_C=-2mA

I_C=-100mA, I_B=-10mA

V_CE=-10V, I_C=-1mA

V_CB=-10V, I_E=0, f=1MHz

120

V_CE(sat)

Collector-emitter saturation voltage

Transition frequency

MHz

f_T

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

120-240

Range

200-400

Marking

中文翻译

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