Datasheet > 2SA1832_15

2SA1832_15

更新时间： 2024-11-16 01:12:11

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科信 - KEXIN		/
页数	文件大小	规格书
2页	978K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1832_15 数据手册

SMD Type

Transistors

PNP Transistors

2SA1832

SOT-523

Unit: m m

1.6 ⁺_-⁰₀^._.¹₁

1.0 ⁺_-⁰₀^._.¹₁

0.2_-⁺⁰₀^._.⁰₀⁵₅

0.15±0.05

■ Features

● High voltage and high current

● Excellent hFE linearity

● Complementary to 2SC4738

0.3±0.05

+0.1

-0.1

0.5

1. Base

2. Emitter

3. Collecter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-50

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

-50

-5

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

-150

100

℃/W

RθJA

125

℃

Storage Temperature range

stg

-65 to 125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

^CB= -50 V , I

EB= -5V , I

-100

-0.3

-1.2

400

-0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-100 mA, I

=-10mA

C=-100 mA, I

hFE

^CE= -6V, I

= -2mA

= 0mA,f=1MHz

= -1mA

Collector output capacitance

Transition frequency

CB= -10V, I

CE= -10V, I

MHz

■ Classification of hfe

Type

Range

Marking

2SA1832-O

70-140

2SA1832-Y

120-240

2SA1832-G

200-400

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