Datasheet > 2SA1771

2SA1771

更新时间： 2024-11-23 07:29:43

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管开关局域网
页数	文件大小	规格书
4页	90K
描述
Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA1771 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SA1771

DESCRIPTION

·With TO-220F package

·Low collector saturation voltage

·High speed switching time

APPLICATIONS

·High current switching

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

MAX

-80

UNIT

Open emitter

Open base

-80

Open collector

-14

-12

I_B

Base current

-1.2

P_C

Collector dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3 4

中文翻译

下载PDF

与2SA1771相关器件

型号	品牌	获取价格	描述	数据表
2SA1771_06	TOSHIBA	获取价格	High-Current Switching Applications
2SA1772	KEXIN	获取价格	PNP Epitaxial Planar Silicon Transistor
2SA1772	SANYO	获取价格	High Voltage Driver Applications
2SA1772	TYSEMI	获取价格	High breadown voltage Large current capacity (IC=1A)
2SA1772C(TP)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-251VAR
2SA1772D(TP)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-251VAR
2SA1772D(TP-FA)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-252VAR
2SA1772E(TP)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-251VAR
2SA1772E(TP-FA)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-252VAR
2SA1773	TYSEMI	获取价格	High breadown voltage Large current capacity (IC=2A)