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2SA1625 PDF预览

2SA1625

更新时间: 2024-11-15 04:25:51
品牌 Logo 应用领域
TRSYS 晶体晶体管开关
页数 文件大小 规格书
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描述
Plastic-Encapsulated Transistors

2SA1625 数据手册

  
Transys  
Electronics  
L
I M I T E D  
TO-92 Plastic-Encapsulated Transistors  
2SA1625 TRANSISTOR (PNP)  
TO-92  
FEATURES  
Power dissipation  
1. EMITTER  
2. COLLECTOR  
3. BASE  
PCM  
: 750  
mW (Tamb=25)  
Collector current  
ICM  
: -0.5  
A
V
Collector-base voltage  
V(BR)CBO : -400  
1 2 3  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-100µA, IE=0  
Ic=-1mA, IB=0  
MIN  
-400  
-400  
-7  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
V
V
IE=-100µA, IC=0  
µA  
µA  
VCB=-400V, IE=0  
-1  
-1  
IEBO  
VEB=-5V, IC=0  
hFE(1)  
VCE(sat)  
VBE(sat)  
fT  
VCE=-5V, IC=-50mA  
40  
20  
200  
-1  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
IC=-100mA, IB=-10mA  
IC=-100mA, IB=-10mA  
VCE=-10V, IC=-10mA  
-1.2  
MHz  
pF  
µs  
10  
40  
1
Cob  
Collector output capacitance  
Turn-on Time  
V
CB=-10V, IE=0, f=1MHz  
ton  
VCC=-150V, Ic=-100mA,  
tstg  
5
µs  
Storage Time  
IB!=IB2-10mA, RL=1.5K  
tf  
1
µs  
Fall-Time  
CLASSIFICATION OF hFE(1)  
Rank  
M
L
K
Range  
40-80  
60-120  
100-200  

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