是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | Factory Lead Time: | 1 week |
风险等级: | 5.53 | 最大集电极电流 (IC): | 1 A |
配置: | Single | 最小直流电流增益 (hFE): | 30 |
最高工作温度: | 150 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 1 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 10 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1627A | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627A_12 | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627A_15 | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AG-K-AA3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
2SA1627AG-K-T60-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
2SA1627AG-L-T6C-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
2SA1627AG-M-AA3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
2SA1627AG-M-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic | |
2SA1627AG-T60-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
2SA1627AG-T6C-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, |