是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最大集电极电流 (IC): | 2 A | 配置: | Single |
最小直流电流增益 (hFE): | 40 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 10 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1627 | NEC |
获取价格 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) | |
2SA1627 | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627 | RENESAS |
获取价格 |
1000mA, 600V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SA1627A | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627A_12 | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627A_15 | UTC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2SA1627AG-K-AA3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
2SA1627AG-K-T60-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
2SA1627AG-L-T6C-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
2SA1627AG-M-AA3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor |