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2SA1585SQ PDF预览

2SA1585SQ

更新时间: 2024-11-18 20:25:19
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TRSYS /
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描述
Transistor

2SA1585SQ 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:NBase Number Matches:1

2SA1585SQ 数据手册

  
Transys  
Electronics  
L
I M I T E D  
TO-92S Plastic-Encapsulated Transistors  
2SA1585S TRANSISTOR (PNP)  
TO-92S  
1. EMITTER  
FEATURES  
Power dissipation  
2. COLLECTOR  
3. BASE  
PD : 0.4W (Tamb=25)  
Collector current  
I CM : -2A  
123  
Collector-base voltage  
V(BR)CBO : -20V  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= -50µA , IE=0  
MIN  
-20  
-20  
-6  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -1 mA , IB=0  
IE=- 50µA, IC=0  
V
V
VCB=-20V , IE=0  
VEB= -5V , IC=0  
VCE=-2 V, IC= -0.1A  
-0.1  
-0.1  
390  
-0.5  
µA  
µA  
Emitter cut-off current  
IEBO  
DC current gain  
hFE  
120  
200  
Collector-emitter saturation voltage  
VCEsat  
IC= -2A, IB=-0.1A  
VCE=-2V, IC=-0.5A  
F=100MHz  
V
Transition frequency  
MHz  
fT  
CLASSIFICATION OF hFE  
Rank  
Q
R
Range  
120-170  
180-390  

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