Datasheet > 2SA1586

2SA1586

更新时间： 2024-11-30 06:23:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	47K
描述
Silicon PNP Epitaxial

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中文翻译

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数据手册

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2SA1586 数据手册

SMD Type

TransistIoCrs

Silicon PNP Epitaxial

2SA1586

Features

High voltage and high current.

Excellent hFE linearity.

High hFE.

Low noise.

Small package.

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

V^CEO

V^EBO

I^C

Rating

-50

Unit

-50

-5

-150

-30

Base current

Collector power dissipation

Junction temperature

Storage temperature range

P^C

100

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

DC current gain

Symbol

I^CBO

Min

Typ

-0.1

Max

-0.1

400

-0.3

Unit

ìA

VCB=-50V, IE=0

VEB=-5V, IC=0

I^EBO

ìA

h^FE

VCE=-6V, IC=-2mA

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

V^{CE (sat)}IC=-100mA, IB=-10mA

MHz

f^T

VCE=-10V, IC=-1mA

C^ob

VCB=-10V, IE=0, f=1MHz

V^CE=-6V, IC=-0.1mA, f=1kHz, Rg=10kÙ

1.0

hFE Classification

Marking

hFE

70 140

120 240

200 400

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