2SA1585S-Q-AP

更新时间： 2024-11-21 13:04:07

品牌	Logo	应用领域
美微科 - MCC		晶体小信号双极晶体管
页数	文件大小	规格书
1页	51K
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数据手册

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2SA1585S-Q-AP 数据手册

2SA1585S

2SA1585S-Q

2SA1585S-R

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

PNP

•

Power dissipation: P_D= 0.4W(T_amb=25?)

Collector current: I_CM= -2A

Plastic-Encapsulate

Transistors

Collector-base voltage: V_(BR)CBO= -20V

Operating and storage junction temperature range

T_J, T_stg: -55? to + 150?

Electrical Characteristics @ 25R Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Voltage

(I_C=-50IA, I_E=0)

Min

Typ

Max

Unit

TO-92S

V_CEO

-20

---

Collector-Base Voltage

(I_C=-1IA, I_B=0)

V_CBO

-20

---

Emitter-Base Voltage

(I_E=-50IA, I_C=0)

V_EBO

I_CBO

I_EBO

h_FE

-6.0

---

Collector cut-off Current

(V_CB=-20V, I_E=0)

-0.1

390

-0.82

---

Emitter cut-off Current

(V_EB=-5V, I_C=0)

DC current gain

(V_CE=-2V, I_C=-0.1A)

Collector-Emitter Saturation Voltage

(I_C=-2A, I_B=-0.1A)

Transition Frequency

(V_CE=2.0Vdc, I_C=0.5Adc)

---

120

---

V_CE(sat)

f_T

200

MHz

CLASSIFICATION OF h^FE

Rank

Range

Marking

120-170

1815Q

180-390

1815R

1.EMITTER

2.COLLECTOR

3.BASE

ꢀ

DIMENSIONS

INCHES

MIN

DIM

MAX

---

MIN

MAX

---

NOTE

.16

.12

4.00

3.00

.59

15.00

.02

.08

.20

0.45

2.00

5.00

www.mccsemi.com

Revision: 2

2007/03/02

中文翻译

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