JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SA1586 TRANSISTOR (PNP)
FEATURES
SOT–323
High DC Current Gain
High Voltage and High Current.
Complementary to 2SC4116
Small Package
APPLICATIONS
General Purpose Amplification.
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
-50
V
Collector-Emitter Voltage
-50
V
Emitter-Base Voltage
-5
Collector Current
-150
100
1250
mA
mW
℃/W
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
PC
RΘJA
Operation Junction and
Storage Temperature Range
TJ,Tstg
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
-50
-50
-5
Typ
Max
Unit
V
V(BR)CBO IC=-100µA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-100µA, IC=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
ICBO
IEBO
hFE
VCB=-50V, IE=0
-100
-100
400
nA
nA
VEB=-5V, IC=0
Emitter cut-off current
VCE=-6V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V,Ic=-1mA
VCB=-10V, IE=0, f=1MHz
70
80
DC current gain
VCE(sat)
fT
-0.3
V
Collector-emitter saturation voltage
Transition frequency
MHz
pF
Cob
7
Collector output capacitance
CLASSIFICATION OF hFE
RANK
O
Y
120–240
SY
GR(G)
RANGE
70–140
SO
200–400
MARKING
SG
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1
Rev. - 2.0