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2SA1585S/P PDF预览

2SA1585S/P

更新时间: 2024-11-18 13:04:07
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管
页数 文件大小 规格书
3页 103K
描述
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon

2SA1585S/P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.69最大集电极电流 (IC):2 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):82JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):240 MHz
VCEsat-Max:0.5 VBase Number Matches:1

2SA1585S/P 数据手册

 浏览型号2SA1585S/P的Datasheet PDF文件第2页浏览型号2SA1585S/P的Datasheet PDF文件第3页 
Transistors  
Low VCE(sat) Transistor (*20V, *3A)  
2SB1424 / 2SA1585S  
FFeatures  
FExternal dimensions (Units: mm)  
1) Low VCE(sat).  
VCE(sat) = *0.2V (Typ.)  
(IC /IB = *2A / *0.1A)  
2) Excellent DC current gain charac-  
teristics.  
3) Complements the 2SD2150 /  
2SC4115S.  
FStructure  
Epitaxial planar type  
PNP silicon transistor  
FAbsolute maximum ratings (Ta = 25_C)  
(96-596-A74)  
201  

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