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2SA1534 PDF预览

2SA1534

更新时间: 2024-11-23 22:52:35
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管放大器
页数 文件大小 规格书
3页 50K
描述
Silicon PNP epitaxial planer type

2SA1534 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SA1534 数据手册

 浏览型号2SA1534的Datasheet PDF文件第2页浏览型号2SA1534的Datasheet PDF文件第3页 
Transistor  
2SA1534, 2SA1534A  
Silicon PNP epitaxial planer type  
For low-frequency power amplification and driver amplification  
Complementary to 2SC3940 and 2SC3940A  
Unit: mm  
5.0±0.2  
4.0±0.2  
Features  
Complementary pair with 2SC3940 and 2SC3940A.  
Allowing supply with the radial taping and automatic insertion  
possible.  
0.7±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
Ratings  
Unit  
2SA1534  
Collector to  
base voltage  
Collector to  
emitter voltage  
–30  
–60  
VCBO  
V
2SA1534A  
2SA1534  
0.45+00..115  
1.27  
0.45+00..115  
–25  
1.27  
VCEO  
V
2SA1534A  
–50  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
–5  
V
A
1:Emitter  
2:Collector  
3:Base  
1
2 3  
–1.5  
–1  
2.54±0.15  
A
TO–92NL Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = –20V, IE = 0  
– 0.1  
µA  
Collector to base  
voltage  
2SA1534  
2SA1534A  
–30  
–60  
–25  
–50  
–5  
VCBO  
IC = –10µA, IE = 0  
V
Collector to emitter 2SA1534  
VCEO  
VEBO  
IC = –2mA, IB = 0  
V
V
voltage  
2SA1534A  
Emitter to base voltage  
IE = –10µA, IC = 0  
*
hFE1  
VCE = –10V, IC = –500mA  
VCE = –5V, IC = –1A  
85  
340  
Forward current transfer ratio  
hFE2  
50  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = –500mA, IB = –50mA  
IC = –500mA, IB = –50mA  
– 0.2  
– 0.85  
200  
– 0.4  
–1.2  
V
V
Transition frequency  
fT  
VCB = –10V, IE = 50mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
MHz  
pF  
Collector output capacitance  
Cob  
20  
30  
*hFE1 Rank classification  
Rank  
hFE1  
Q
R
S
85 ~ 170  
120 ~ 240  
170 ~ 340  
1

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