Datasheet > 2SA1534AS

2SA1534AS

更新时间： 2024-11-23 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	60K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| TO-92

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中文翻译

获取价格

数据手册

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2SA1534AS 数据手册

Transistor

2SA1534, 2SA1534A

Silicon PNP epitaxial planer type

For low-frequency power amplification and driver amplification

Complementary to 2SC3940 and 2SC3940A

Unit: mm

5.0±0.2

4.0±0.2

Features

■

●

Complementary pair with 2SC3940 and 2SC3940A.

●

Allowing supply with the radial taping and automatic insertion

possible.

0.7±0.1

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

Unit

2SA1534

Collector to

base voltage

Collector to

emitter voltage

–30

–60

V_CBO

2SA1534A

2SA1534

0.45⁺^–0⁰^.^.¹¹⁵

1.27

0.45⁺^–0⁰^.^.¹¹⁵

–25

1.27

V_CEO

2SA1534A

–50

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

–5

1:Emitter

2:Collector

3:Base

2 3

–1.5

–1

2.54±0.15

TO–92NL Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= –20V, I_E= 0

– 0.1

µA

Collector to base

voltage

2SA1534

2SA1534A

–30

–60

–25

–50

–5

V_CBO

I_C= –10µA, I_E= 0

Collector to emitter 2SA1534

V_CEO

V_EBO

I_C= –2mA, I_B= 0

voltage

2SA1534A

Emitter to base voltage

I_E= –10µA, I_C= 0

h_FE1

V_CE= –10V, I_C= –500mA

V_CE= –5V, I_C= –1A

340

Forward current transfer ratio

h_FE2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –500mA, I_B= –50mA

– 0.2

– 0.85

200

– 0.4

–1.2

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

MHz

Collector output capacitance

C_ob

^*h_FE1Rank classification

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

12 3 4

中文翻译

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