Transistor
2SA1534, 2SA1534A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC3940 and 2SC3940A
Unit: mm
5.0±0.2
4.0±0.2
Features
■
●
Complementary pair with 2SC3940 and 2SC3940A.
●
Allowing supply with the radial taping and automatic insertion
possible.
0.7±0.1
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
Ratings
Unit
2SA1534
Collector to
base voltage
Collector to
emitter voltage
–30
–60
VCBO
V
2SA1534A
2SA1534
0.45+–00..115
1.27
0.45+–00..115
–25
1.27
VCEO
V
2SA1534A
–50
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
–5
V
A
1:Emitter
2:Collector
3:Base
1
2 3
–1.5
–1
2.54±0.15
A
TO–92NL Package
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
VCB = –20V, IE = 0
– 0.1
µA
Collector to base
voltage
2SA1534
2SA1534A
–30
–60
–25
–50
–5
VCBO
IC = –10µA, IE = 0
V
Collector to emitter 2SA1534
VCEO
VEBO
IC = –2mA, IB = 0
V
V
voltage
2SA1534A
Emitter to base voltage
IE = –10µA, IC = 0
*
hFE1
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
85
340
Forward current transfer ratio
hFE2
50
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
– 0.2
– 0.85
200
– 0.4
–1.2
V
V
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
MHz
pF
Collector output capacitance
Cob
20
30
*hFE1 Rank classification
Rank
hFE1
Q
R
S
85 ~ 170
120 ~ 240
170 ~ 340
1