是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.82 |
最大集电极电流 (IC): | 1.5 A | 基于收集器的最大容量: | 35 pF |
集电极-发射极最大电压: | 150 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 10 W | 最大功率耗散 (Abs): | 1.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | VCEsat-Max: | 1.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1411 | KEXIN |
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Silicon PNP Epitaxia | |
2SA1411 | TYSEMI |
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Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V | |
2SA1411-LM15 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1411-T1B | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1411-T1BM15 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1411-T1BM16 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1411-T2BM15 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1411-T2BM16 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI | |
2SA1412 | NEC |
获取价格 |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 | |
2SA1412(0)-ZK-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,400V V(BR)CEO,2A I(C),TO-252 |